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Total Power Loss
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Conduction Loss
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Switching Loss
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Gate Charge Loss
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Average Gate Current
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Gate Driver Power
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Gate charge (QG) is the amount of electrical charge required to turn on a MOSFET. It determines the switching speed and gate driver current requirements. Higher gate charge means slower switching and more power loss.
Gate driver current equals gate charge times switching frequency (IG = QG × fSW). This determines the minimum current capability needed from your gate driver circuit.
The three main power losses are: conduction loss (I²R loss when ON), switching loss (during transitions), and gate charge loss (energy to charge/discharge the gate capacitance).
Higher switching frequency increases both switching losses and gate charge losses proportionally, while conduction losses remain constant. This is why high-frequency applications require MOSFETs with low QG and fast switching times.
RDS(on) is the drain-source resistance when the MOSFET is fully ON. Conduction power loss equals I²D × RDS(on), so lower RDS(on) reduces power dissipation but may increase gate charge.
Longer rise and fall times increase switching losses because the MOSFET spends more time in the linear region where both voltage and current are present simultaneously.
Use the gate voltage specified in the datasheet for rated RDS(on), typically 10V for standard MOSFETs and 4.5V for logic-level devices. Higher voltage reduces RDS(on) but increases gate charge losses.
Coss creates additional switching losses as it must be charged/discharged during each switching cycle. The energy loss per cycle is 0.5 × Coss × VDS², multiplied by switching frequency.